Lateral p-n junctions for high-density LED arrays
نویسندگان
چکیده
A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining barriers and coplanar contacts while simplifying device process. Light emission is uniform all over the 1200 dpi array and electroluminescence spectrum has a single peak at 960 nm. q 2003 Elsevier Science Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 34 شماره
صفحات -
تاریخ انتشار 2003